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Power LDMOS transistor
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using Ampleon"s XR process to provide maximum ruggedness capability in the most severe applications without compromising the RF performance.
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| Quantity | Price | You Save |
|---|---|---|
| 2 | € 336,11 | Up to € 13,72 |
| 3 | € 332,68 | Up to € 30,87 |
| 4 | € 329,25 | Up to € 54,88 |
| 5 | € 308,67 | Up to € 171,49 |
| 10 | € 291,52 | Up to € 514,46 |
Product discription:
Power LDMOS transistor
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using Ampleon"s XR process to provide maximum ruggedness capability in the most severe applications without compromising the RF performance.
Features and benefits
Technical facts
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 10 | 500 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 1400 | W | |||
| Test signal: Pulsed RF | ||||||
| Gp | power gain | VDS = 50 V; f = 225 MHz; IDq = 40 mA; PL = 1400 W [0] | 22 | 23.5 | dB | |
| RLin | input return loss | VDS = 50 V; IDq = 40 mA; PL = 1400 W [0] | -17 | -13 | dB | |
| ηD | drain efficiency | VDS = 50 V; f = 225 MHz; IDq = 40 mA; PL = 1400 W [0] | 65 | 69 | % | |
| PL | output power | VDS = 50 V; f = 225 MHz [0] | 1400 | W | ||
Power LDMOS transistorA 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is...
