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BLF578XR Power 1400W LDMOS transistor Ampleon
BLF578XR
New
Power LDMOS transistor
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using Ampleon"s XR process to provide maximum ruggedness capability in the most severe applications without compromising the RF performance.
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Volume discounts
| Quantity | Price | You Save |
|---|---|---|
| 5 | € 306,44 | Up to € 170,25 |
| 10 | € 289,42 | Up to € 510,74 |
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Product discription:
Power LDMOS transistor
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using Ampleon"s XR process to provide maximum ruggedness capability in the most severe applications without compromising the RF performance.
Features and benefits
- Easy power control
- Integrated ESD protection
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (HF to 500 MHz)
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
Technical facts
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 10 | 500 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 1400 | W | |||
| Test signal: Pulsed RF | ||||||
| Gp | power gain | VDS = 50 V; f = 225 MHz; IDq = 40 mA; PL = 1400 W [0] | 22 | 23.5 | dB | |
| RLin | input return loss | VDS = 50 V; IDq = 40 mA; PL = 1400 W [0] | -17 | -13 | dB | |
| ηD | drain efficiency | VDS = 50 V; f = 225 MHz; IDq = 40 mA; PL = 1400 W [0] | 65 | 69 | % | |
| PL | output power | VDS = 50 V; f = 225 MHz [0] | 1400 | W | ||
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BLF578XR Power 1400W LDMOS transistor Ampleon
Power LDMOS transistor A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is...