BLF578XR Power 1400W LDMOS transistor Ampleon

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Model BLF578XR

Condition New

Power LDMOS transistor

A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using Ampleon"s XR process to provide maximum ruggedness capability in the most severe applications without compromising the RF performance.

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€ 330,57

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Volume discounts - BLF578XR Power 1400W LDMOS transistor Ampleon

Quantity	Discount	You Save
2	2%	Up to € 13,22
3	3%	Up to € 29,75
4	4%	Up to € 52,89
5	10%	Up to € 165,29
10	15%	Up to € 495,86

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Product discription:

Power LDMOS transistor

Features and benefits

Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 500 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

Technical facts

Symbol	Parameter	Conditions	Min	Typ/Nom	Max	Unit
f_range	frequency range		10		500	MHz
P_L(1dB)	nominal output power at 1 dB gain compression			1400		W
Test signal: Pulsed RF
G_p	power gain	V_DS = 50 V; f = 225 MHz; I_Dq = 40 mA; P_L = 1400 W ^[0]	22	23.5		dB
RL_in	input return loss	V_DS = 50 V; I_Dq = 40 mA; P_L = 1400 W ^[0]		-17	-13	dB
η_D	drain efficiency	V_DS = 50 V; f = 225 MHz; I_Dq = 40 mA; P_L = 1400 W ^[0]	65	69		%
P_L	output power	V_DS = 50 V; f = 225 MHz ^[0]		1400		W