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> >>>>BLF578XR Power 1400W LDMOS transistor Ampleon

BLF578XR Power 1400W LDMOS transistor Ampleon

BLF578XR

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Power LDMOS transistor

A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using Ampleon"s XR process to provide maximum ruggedness capability in the most severe applications without compromising the RF performance.

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€ 411,99 tax incl.

Special: 10 Euro Discount on your order

Volume discounts

Quantity Price You Save
5 € 370,79 Up to € 206,00
10 € 350,19 Up to € 617,99

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Product discription:

Power LDMOS transistor

A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using Ampleon"s XR process to provide maximum ruggedness capability in the most severe applications without compromising the RF performance.

Features and benefits

  • Easy power control
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (HF to 500 MHz)
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

 

Technical facts

SymbolParameterConditionsMinTyp/NomMaxUnit
frange frequency range   10   500 MHz
PL(1dB) nominal output power at 1 dB gain compression     1400   W
Test signal: Pulsed RF
Gp power gain VDS = 50 V; f = 225 MHz; IDq = 40 mA; PL = 1400 W [0] 22 23.5   dB
RLin input return loss VDS = 50 V; IDq = 40 mA; PL = 1400 W [0]   -17 -13 dB
ηD drain efficiency VDS = 50 V; f = 225 MHz; IDq = 40 mA; PL = 1400 W [0] 65 69   %
PL output power VDS = 50 V; f = 225 MHz [0]   1400   W

 

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BLF578XR Power 1400W LDMOS transistor Ampleon

BLF578XR Power 1400W LDMOS transistor Ampleon

Power LDMOS transistor

A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using Ampleon"s XR process to provide maximum ruggedness capability in the most severe applications without compromising the RF performance.

Write a review

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