On DMR-Electronics, we use cookies to enhance your shopping experience. If you continue to browse you accept our cookies close
Reduced price! MRF1K50GNR5 RF MOSFET-transistors BL RF 1500W RF Power Transistor View larger

MRF1K50GNR5 1500W RF Power MOSFET-transistors BL RF

841-MRF1K50GNR5

New

NXP MRF1K50N and MRF1K50GNR5 1500W RF Power Transistors combine high RF output power, superior ruggedness, and thermal performance. These LDMOS devices feature an over-molded plastic package, offering up to 30% lower thermal resistance compared with the ceramic MRF1K50H. NXP's plastic packaging technology helps extract more performance from RF transistors, while simplifying amplifier manufacturability thanks to tighter dimensional tolerances and better solder connections. 

NXP MRF1K50N and MRF1K50GNR5 RF Power Transistors are designed to deliver 1.50kW CW at 50V and reduce the number of transistors in high-power RF amplifiers. The input and output design of these devices allow for wide frequency range use from 1.8 to 500 MHz.

More details


✓ Good price ✓ Safe to Pay
✓ Free shipping to NL ✓ Money back guarantee
✓ Volume discount ✓ Bonus system
✓ Large assortment ✓ QShops certification

No reward points for this product because there's already a discount.


EUR 226,79 tax incl.

-10%

EUR 251,99

Add to wishlist

Volume discounts

Quantity Price You Save
5 EUR 217,72 Up to EUR 45,36
10 EUR 206,38 Up to EUR 204,11

More info

Product discription:


NXP MRF1K50N and MRF1K50GNR5 1500W RF Power Transistors combine high RF output power, superior ruggedness, and thermal performance. These LDMOS devices feature an over-molded plastic package, offering up to 30% lower thermal resistance compared with the ceramic MRF1K50H. NXP's plastic packaging technology helps extract more performance from RF transistors, while simplifying amplifier manufacturability thanks to tighter dimensional tolerances and better solder connections. 

NXP MRF1K50N and MRF1K50GNR5 RF Power Transistors are designed to deliver 1.50kW CW at 50V and reduce the number of transistors in high-power RF amplifiers. The input and output design of these devices allow for wide frequency range use from 1.8 to 500 MHz.

Features

  • High drain-source avalanche energy absorption capability
  • Unmatched input and output allowing wide frequency range utilization
  • Device can be used single-ended or in a push-pull configuration
  • Characterized from 30V to 50V for ease of use
  • Suitable for linear application
  • Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
  • RoHS compliant
  • Offered in OM-1230-4L (MRF1K50N) and OM-1230G-4L (MRF1K50GN) packages for design flexibility

Applications

  • Industrial, Scientific, Medical (ISM)
    • Laser generation
    • Plasma etching
    • Particle accelerators
    • MRI, diathermy, skin laser and ablation
    • Industrial heating, welding and drying systems
  • Broadcast
    • Radio broadcast
    • VHF TV broadcast
  • Aerospace
    • VHF Omnidirectional Range (VOR)
    • HF and VHF communications
    • Weather radar
  • Mobile Radio
    • VHF and UHF base stations

 

Technical facts:


Product Category: RF MOSFET Transistors
Manufacturer: NXP
RoHS: RoHS Compliant 
 
Transistor Polarity: N-Channel  
Id - Continuous Drain Current: 36 A  
Vds - Drain-Source Breakdown Voltage: 133 V  
Technology: Si  
Gain: 23 dB  
Output Power: 1.5 kW  
Maximum Operating Temperature: + 150 C  
Mounting Style: SMD/SMT  
Package/Case: OM-1230G-4L  
Packaging: Reel  
Brand: NXP / Freescale  
Forward Transconductance - Min: 33.5 S  
Minimum Operating Temperature: - 40 C  
Number of Channels: 2 Channel  
Operating Frequency: 1.8 MHz to 500 MHz  
Pd - Power Dissipation: 2.941 kW  
Factory Pack Quantity: 50  
Type: RF Power MOSFET  
Vgs - Gate-Source Voltage: - 6 V, + 10 V  
Vgs th - Gate-Source Threshold Voltage: 1.7 V

Reviews

Write a review

MRF1K50GNR5 1500W RF Power MOSFET-transistors BL RF

MRF1K50GNR5 1500W RF Power MOSFET-transistors BL RF

NXP MRF1K50N and MRF1K50GNR5 1500W RF Power Transistors combine high RF output power, superior ruggedness, and thermal performance. These LDMOS devices feature an over-molded plastic package, offering up to 30% lower thermal resistance compared with the ceramic MRF1K50H. NXP's plastic packaging technology helps extract more performance from RF transistors, while simplifying amplifier manufacturability thanks to tighter dimensional tolerances and better solder connections. 

NXP MRF1K50N and MRF1K50GNR5 RF Power Transistors are designed to deliver 1.50kW CW at 50V and reduce the number of transistors in high-power RF amplifiers. The input and output design of these devices allow for wide frequency range use from 1.8 to 500 MHz.

Write a review

20 other products in the same category: