MRF300BN RF 300 W
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: 771-MRF101BN
: Neu
MRF101BN RF MOSFET-Transistoren Breitband RF Power LDMOS Transistor, 100 W CW über 1,8-250 MHz, 50 V
Product discription:
MRF101BN RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
These devices are designed for use in VHF/UHF communications, VHF TV
broadcast and aerospace applications as well as industrial, scientific and
medical applications. The devices are exceptionally rugged and exhibit high
performance up to 250 MHz.
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