MRF300BN RF 300 W

    MRF300BN RF 300 W View larger

    MRF300BN RF 300 W

    771-MRF101BN

    MRF101BN RF MOSFET-transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V

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    € 59,99

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    Product information MRF300BN RF 300 W

    Product discription:


    MRF101BN RF Power LDMOS Transistors
    High Ruggedness N--Channel
    Enhancement--Mode Lateral MOSFETs
    These devices are designed for use in VHF/UHF communications, VHF TV
    broadcast and aerospace applications as well as industrial, scientific and
    medical applications. The devices are exceptionally rugged and exhibit high
    performance up to 250 MHz.

    Features

    • Mirror pinout versions (A and B) to simplify use in a push--pull,
      two--up configuration
    • Characterized from 30 to 50 V
    • Suitable for linear application
    • Integrated ESD protection with greater negative gate--source
    • voltage range for improved Class C operation
    • Included in NXP product longevity program with assured
      supply for a minimum of 15 years after launch
    • Typical Applications
      Industrial, scientific, medical (ISM)
      Laser generation
      Plasma etching
      Particle accelerators
      MRI and other medical applications
      Industrial heating, welding and drying systems
      Radio and VHF TV broadcast
      HF and VHF communications
      Switch mode power supplies

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