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MRF300BN RF 300 W
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: 771-MRF101BN
: New
: MRF300BN RF 300 W
MRF101BN RF MOSFET-transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
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Product information
Product discription:
MRF101BN RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
These devices are designed for use in VHF/UHF communications, VHF TV
broadcast and aerospace applications as well as industrial, scientific and
medical applications. The devices are exceptionally rugged and exhibit high
performance up to 250 MHz.
Features
- Mirror pinout versions (A and B) to simplify use in a push--pull,
two--up configuration - Characterized from 30 to 50 V
- Suitable for linear application
- Integrated ESD protection with greater negative gate--source
- voltage range for improved Class C operation
- Included in NXP product longevity program with assured
supply for a minimum of 15 years after launch - Typical Applications
Industrial, scientific, medical (ISM)
Laser generation
Plasma etching
Particle accelerators
MRI and other medical applications
Industrial heating, welding and drying systems
Radio and VHF TV broadcast
HF and VHF communications
Switch mode power supplies
