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> >>>>MRF1K50GNR5 1500W RF Power MOSFET-transistors BL RF
MRF1K50GNR5 RF MOSFET-transistors BL RF 1500W RF Power Transistor Bekijk groter

MRF1K50GNR5 1500W RF Power MOSFET-transistors BL RF

841-MRF1K50GNR5

Nieuw

NXP MRF1K50N and MRF1K50GNR5 1500W RF Power Transistors combine high RF output power, superior ruggedness, and thermal performance. These LDMOS devices feature an over-molded plastic package, offering up to 30% lower thermal resistance compared with the ceramic MRF1K50H. NXP's plastic packaging technology helps extract more performance from RF transistors, while simplifying amplifier manufacturability thanks to tighter dimensional tolerances and better solder connections. 

NXP MRF1K50N and MRF1K50GNR5 RF Power Transistors are designed to deliver 1.50kW CW at 50V and reduce the number of transistors in high-power RF amplifiers. The input and output design of these devices allow for wide frequency range use from 1.8 to 500 MHz.

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Product discription:

NXP MRF1K50N and MRF1K50GNR5 1500W RF Power Transistors combine high RF output power, superior ruggedness, and thermal performance. These LDMOS devices feature an over-molded plastic package, offering up to 30% lower thermal resistance compared with the ceramic MRF1K50H. NXP's plastic packaging technology helps extract more performance from RF transistors, while simplifying amplifier manufacturability thanks to tighter dimensional tolerances and better solder connections. 

NXP MRF1K50N and MRF1K50GNR5 RF Power Transistors are designed to deliver 1.50kW CW at 50V and reduce the number of transistors in high-power RF amplifiers. The input and output design of these devices allow for wide frequency range use from 1.8 to 500 MHz.

Features

  • High drain-source avalanche energy absorption capability
  • Unmatched input and output allowing wide frequency range utilization
  • Device can be used single-ended or in a push-pull configuration
  • Characterized from 30V to 50V for ease of use
  • Suitable for linear application
  • Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
  • RoHS compliant
  • Offered in OM-1230-4L (MRF1K50N) and OM-1230G-4L (MRF1K50GN) packages for design flexibility

Applications

  • Industrial, Scientific, Medical (ISM)
    • Laser generation
    • Plasma etching
    • Particle accelerators
    • MRI, diathermy, skin laser and ablation
    • Industrial heating, welding and drying systems
  • Broadcast
    • Radio broadcast
    • VHF TV broadcast
  • Aerospace
    • VHF Omnidirectional Range (VOR)
    • HF and VHF communications
    • Weather radar
  • Mobile Radio
    • VHF and UHF base stations

 

Technical facts:

Productcategorie: RF MOSFET-transistors  
Fabrikant: NXP  
RoHS: RoHS-conformiteit  
  
Polariteit transistor: N-Channel  
Id - Continue afvoerstroom: 36 A  
Vds - Doorslagspanning van druppelbron: 133 V  
Technologie: Si  
Versterking: 23 dB  
Uitgangsvermogen: 1.5 kW  
Maximale bedrijfstemperatuur: + 150 C  
Montagetype: SMD/SMT  
Verpakking / doos: OM-1230G-4L  
Verpakken: Reel  
Merk: NXP / Freescale  
Voorwaartse transconductantie - min: 33.5 S  
Minimale bedrijfstemperatuur: - 40 C  
Aantal kanalen: 2 Channel  
Werkingsfrequentie: 1.8 MHz to 500 MHz  
Pd - Vermogensverlies: 2.941 kW  
Verpakkingshoeveelheid af fabriek: 50  
Type: RF Power MOSFET  
Vgs - Poort-bronspanning: - 6 V, + 10 V  
Vgs th - Drempelspanning van ingangsbron: 1.7 V

Recensies

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MRF1K50GNR5 1500W RF Power MOSFET-transistors BL RF

MRF1K50GNR5 1500W RF Power MOSFET-transistors BL RF

NXP MRF1K50N and MRF1K50GNR5 1500W RF Power Transistors combine high RF output power, superior ruggedness, and thermal performance. These LDMOS devices feature an over-molded plastic package, offering up to 30% lower thermal resistance compared with the ceramic MRF1K50H. NXP's plastic packaging technology helps extract more performance from RF transistors, while simplifying amplifier manufacturability thanks to tighter dimensional tolerances and better solder connections. 

NXP MRF1K50N and MRF1K50GNR5 RF Power Transistors are designed to deliver 1.50kW CW at 50V and reduce the number of transistors in high-power RF amplifiers. The input and output design of these devices allow for wide frequency range use from 1.8 to 500 MHz.

Schrijf uw recensie

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