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NXP MRF1K50N and MRF1K50GNR5 1500W RF Power Transistors combine high RF output power, superior ruggedness, and thermal performance. These LDMOS devices feature an over-molded plastic package, offering up to 30% lower thermal resistance compared with the ceramic MRF1K50H. NXP's plastic packaging technology helps extract more performance from RF transistors, while simplifying amplifier manufacturability thanks to tighter dimensional tolerances and better solder connections.
NXP MRF1K50N and MRF1K50GNR5 RF Power Transistors are designed to deliver 1.50kW CW at 50V and reduce the number of transistors in high-power RF amplifiers. The input and output design of these devices allow for wide frequency range use from 1.8 to 500 MHz.
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| Aantal | Prijs | U bespaart |
|---|---|---|
| 2 | € 206,53 | Tot € 8,43 |
| 3 | € 204,42 | Tot € 18,97 |
| 4 | € 202,31 | Tot € 33,72 |
| 5 | € 189,67 | Tot € 105,37 |
| 10 | € 179,13 | Tot € 316,11 |
Product discription:
NXP MRF1K50N and MRF1K50GNR5 1500W RF Power Transistors combine high RF output power, superior ruggedness, and thermal performance. These LDMOS devices feature an over-molded plastic package, offering up to 30% lower thermal resistance compared with the ceramic MRF1K50H. NXP's plastic packaging technology helps extract more performance from RF transistors, while simplifying amplifier manufacturability thanks to tighter dimensional tolerances and better solder connections.
NXP MRF1K50N and MRF1K50GNR5 RF Power Transistors are designed to deliver 1.50kW CW at 50V and reduce the number of transistors in high-power RF amplifiers. The input and output design of these devices allow for wide frequency range use from 1.8 to 500 MHz.
Features
Applications
Technical facts:
| Productcategorie: | RF MOSFET-transistors | |
| Fabrikant: | NXP | |
| RoHS: |  | |
| Polariteit transistor: | N-Channel | |
| Id - Continue afvoerstroom: | 36 A | |
| Vds - Doorslagspanning van druppelbron: | 133 V | |
| Technologie: | Si | |
| Versterking: | 23 dB | |
| Uitgangsvermogen: | 1.5 kW | |
| Maximale bedrijfstemperatuur: | + 150 C | |
| Montagetype: | SMD/SMT | |
| Verpakking / doos: | OM-1230G-4L | |
| Verpakken: | Reel | |
| Merk: | NXP / Freescale | |
| Voorwaartse transconductantie - min: | 33.5 S | |
| Minimale bedrijfstemperatuur: | - 40 C | |
| Aantal kanalen: | 2 Channel | |
| Werkingsfrequentie: | 1.8 MHz to 500 MHz | |
| Pd - Vermogensverlies: | 2.941 kW | |
| Verpakkingshoeveelheid af fabriek: | 50 | |
| Type: | RF Power MOSFET | |
| Vgs - Poort-bronspanning: | - 6 V, + 10 V | |
| Vgs th - Drempelspanning van ingangsbron: | 1.7 V |
NXP MRF1K50N and MRF1K50GNR5 1500W RF Power Transistors combine high RF output power, superior ruggedness, and thermal performance. These LDMOS devices...
