MRF1K50GNR5 1500W RF Power MOSFET-transistors BL RF

MRF1K50GNR5 RF MOSFET-transistors BL RF 1500W RF Power Transistor

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Model 841-MRF1K50GNR5

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NXP MRF1K50N and MRF1K50GNR5 1500W RF Power Transistors combine high RF output power, superior ruggedness, and thermal performance. These LDMOS devices feature an over-molded plastic package, offering up to 30% lower thermal resistance compared with the ceramic MRF1K50H. NXP's plastic packaging technology helps extract more performance from RF transistors, while simplifying amplifier manufacturability thanks to tighter dimensional tolerances and better solder connections.

NXP MRF1K50N and MRF1K50GNR5 RF Power Transistors are designed to deliver 1.50kW CW at 50V and reduce the number of transistors in high-power RF amplifiers. The input and output design of these devices allow for wide frequency range use from 1.8 to 500 MHz.

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Volumekorting - MRF1K50GNR5 1500W RF Power MOSFET-transistors BL RF

Aantal	Korting	U bespaart
2	2%	Tot € 8,10
3	3%	Tot € 18,22
4	4%	Tot € 32,40
5	10%	Tot € 101,24
10	15%	Tot € 303,71

Productinformatie

Product discription:

Features

High drain-source avalanche energy absorption capability
Unmatched input and output allowing wide frequency range utilization
Device can be used single-ended or in a push-pull configuration
Characterized from 30V to 50V for ease of use
Suitable for linear application
Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
RoHS compliant
Offered in OM-1230-4L (MRF1K50N) and OM-1230G-4L (MRF1K50GN) packages for design flexibility

Applications

Industrial, Scientific, Medical (ISM)
- Laser generation
- Plasma etching
- Particle accelerators
- MRI, diathermy, skin laser and ablation
- Industrial heating, welding and drying systems
Broadcast
- Radio broadcast
- VHF TV broadcast
Aerospace
- VHF Omnidirectional Range (VOR)
- HF and VHF communications
- Weather radar
Mobile Radio
- VHF and UHF base stations

Technical facts:

Productcategorie:	RF MOSFET-transistors
Fabrikant:	NXP
RoHS:
Polariteit transistor:	N-Channel
Id - Continue afvoerstroom:	36 A
Vds - Doorslagspanning van druppelbron:	133 V
Technologie:	Si
Versterking:	23 dB
Uitgangsvermogen:	1.5 kW
Maximale bedrijfstemperatuur:	+ 150 C
Montagetype:	SMD/SMT
Verpakking / doos:	OM-1230G-4L
Verpakken:	Reel
Merk:	NXP / Freescale
Voorwaartse transconductantie - min:	33.5 S
Minimale bedrijfstemperatuur:	- 40 C
Aantal kanalen:	2 Channel
Werkingsfrequentie:	1.8 MHz to 500 MHz
Pd - Vermogensverlies:	2.941 kW
Verpakkingshoeveelheid af fabriek:	50
Type:	RF Power MOSFET
Vgs - Poort-bronspanning:	- 6 V, + 10 V
Vgs th - Drempelspanning van ingangsbron:	1.7 V