MRFX1K80GNR5 1800W RF mosfet
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: MRFX1K80GNR5
: New
MRFX1K80GNR5 1800W RF mosfet, Wideband RF Power LDMOS Transistor
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Product information
Product discription:
RF MOSFET-transistors Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V
These high ruggedness devices are designed for use in high VSWR
industrial, medical, broadcast, aerospace and mobile radio applications. Their
unmatched input and output design supports frequency use from 1.8 to
400 MHz.
Technical facts:
| NXP | |
| RF MOSFET-transistors | |
| RoHS: | Details |
| Dual N-Channel | |
| Si | |
| 43 A | |
| - 500 mV, 179 V | |
| 1.8 MHz to 400 MHz | |
| 24.4 dB | |
| 1.8 kW | |
| - 40 C | |
| + 150 C | |
| SMD/SMT | |
| OM-1230G-4L | |
| Cut Tape | |
| Reel | |
| Reeks: | MRFX1K80 |
| Type: | RF Power MOSFET |
| Merk: | NXP Semiconductors |
| Voorwaartse transconductantie - min: | 44.7 S |
| Aantal kanalen: | 2 Channel |
| Vochtgevoelig: | Yes |
| Pd - Vermogensverlies: | 3333 W |
| Producttype: | RF MOSFET Transistors |
| Subcategorie: | MOSFETs |
| Vgs - Poort-bronspanning: | - 6 V, 10 V |
| Vgs th - Drempelspanning van ingangsbron: | 2.1 V |
| Onderdeelnr. Aliassen: | 935362677578 |
| Gewicht per stuk: | 5,281 g |
