NXP MRF1K50N and MRF1K50GNR5 1500W RF Power Transistors combine high RF output power, superior ruggedness, and thermal performance. These LDMOS devices feature an over-molded plastic package, offering up to 30% lower thermal resistance compared with the ceramic MRF1K50H. NXP's plastic packaging technology helps extract more performance from RF...
Power LDMOS transistor
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using Ampleon"s XR process to provide maximum ruggedness capability in the most severe applications without compromising the RF performance.
Power Amplifier Section 600W FM Designed primarily for FM application, this amplifier is suitable for any CW or pulsed application.
87.5 - 108 MHz
Pout: 600 W
Gain: 23 dB
Extreme Ruggedness (VSWR 65:1)
Supply : 30-48 VDC - 43VDC nominal
Dimensions(LxWxH): 140x68x21 mm 5,55”x2,67”x0,82”