MRF300BN RF 300 W



            MRF300BN RF MOSFET-transistors RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V

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              € 78,50

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      Volumekorting - MRF300BN RF 300 W

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        4 4% Tot € 12,56
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        8 8% Tot € 50,24
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        Product discription:

        MRF300BN RF Power LDMOS Transistors High Ruggedness N--Channel
        Enhancement--Mode Lateral MOSFETs
        These high ruggedness devices are designed for use in high VSWR industrial,
        scientific and medical applications and HF and VHF communications as well as
        radio and VHF TV broadcast, sub--GHz aerospace and mobile radio applications.
        Their unmatched input and output design allows for wide frequency range use
        from 1.8 to 250 MHz


        • Unmatched input and output allowing wide frequency range
        • Two opposite pin--connection versions (A and B) to be used in
          a push--pull, two--up configuration for wideband performance
        • Characterized from 30 to 50 V
        • Suitable for linear application
        • Integrated ESD protection with greater negative gate--source
          voltage range for improved Class C operation
        • Typical Applications
          Industrial, scientific, medical (ISM)
          Laser generation
          Plasma etching
          Particle accelerators
          MRI and other medical applications
          Industrial heating, welding and drying systems
          Radio broadcast
          VHF TV broadcast
          Mobile radio
          VHF base stations
          HF and VHF communications
          Switch mode power supplies

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          • MRF300BN RF 300 W

              MRF300BN RF 300 W

              MRF300BN RF MOSFET-transistors RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V