MRF300BN RF 300 W



    MRF300BN RF MOSFET-transistors RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V

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    € 70,24

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    Meer informatie MRF300BN RF 300 W

    Product discription:

    MRF300BN RF Power LDMOS Transistors High Ruggedness N--Channel
    Enhancement--Mode Lateral MOSFETs
    These high ruggedness devices are designed for use in high VSWR industrial,
    scientific and medical applications and HF and VHF communications as well as
    radio and VHF TV broadcast, sub--GHz aerospace and mobile radio applications.
    Their unmatched input and output design allows for wide frequency range use
    from 1.8 to 250 MHz


    • Unmatched input and output allowing wide frequency range
    • Two opposite pin--connection versions (A and B) to be used in
      a push--pull, two--up configuration for wideband performance
    • Characterized from 30 to 50 V
    • Suitable for linear application
    • Integrated ESD protection with greater negative gate--source
      voltage range for improved Class C operation
    • Typical Applications
      Industrial, scientific, medical (ISM)
      Laser generation
      Plasma etching
      Particle accelerators
      MRI and other medical applications
      Industrial heating, welding and drying systems
      Radio broadcast
      VHF TV broadcast
      Mobile radio
      VHF base stations
      HF and VHF communications
      Switch mode power supplies