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MRF300BN RF 300 W
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: 771-MRF300BN
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: MRF300BN RF 300 W
MRF300BN RF MOSFET-transistors RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
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Productinformatie
Product discription:
MRF300BN RF Power LDMOS Transistors High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR industrial,
scientific and medical applications and HF and VHF communications as well as
radio and VHF TV broadcast, sub--GHz aerospace and mobile radio applications.
Their unmatched input and output design allows for wide frequency range use
from 1.8 to 250 MHz
Features
- Unmatched input and output allowing wide frequency range
utilization - Two opposite pin--connection versions (A and B) to be used in
a push--pull, two--up configuration for wideband performance - Characterized from 30 to 50 V
- Suitable for linear application
- Integrated ESD protection with greater negative gate--source
voltage range for improved Class C operation - Typical Applications
Industrial, scientific, medical (ISM)
Laser generation
Plasma etching
Particle accelerators
MRI and other medical applications
Industrial heating, welding and drying systems
Broadcast
Radio broadcast
VHF TV broadcast
Mobile radio
VHF base stations
HF and VHF communications
Switch mode power supplies
