MRF300BN RF 300 W

        771-MRF101BN

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            MRF101BN RF MOSFET-transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V

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              € 64,99

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      Volume discounts - MRF300BN RF 300 W

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        2 € 63,69 Up to € 2,60
        4 € 62,39 Up to € 10,40
        6 € 61,09 Up to € 23,40
        8 € 59,79 Up to € 41,59
        10 € 58,49 Up to € 64,99

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        Product discription:


        MRF101BN RF Power LDMOS Transistors
        High Ruggedness N--Channel
        Enhancement--Mode Lateral MOSFETs
        These devices are designed for use in VHF/UHF communications, VHF TV
        broadcast and aerospace applications as well as industrial, scientific and
        medical applications. The devices are exceptionally rugged and exhibit high
        performance up to 250 MHz.

        Features

        • Mirror pinout versions (A and B) to simplify use in a push--pull,
          two--up configuration
        • Characterized from 30 to 50 V
        • Suitable for linear application
        • Integrated ESD protection with greater negative gate--source
        • voltage range for improved Class C operation
        • Included in NXP product longevity program with assured
          supply for a minimum of 15 years after launch
        • Typical Applications
          Industrial, scientific, medical (ISM)
          Laser generation
          Plasma etching
          Particle accelerators
          MRI and other medical applications
          Industrial heating, welding and drying systems
          Radio and VHF TV broadcast
          HF and VHF communications
          Switch mode power supplies

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          • MRF300BN RF 300 W

              MRF300BN RF 300 W

              MRF101BN RF MOSFET-transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V