MRF300BN RF 300 W

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Model 771-MRF101BN

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MRF101BN RF MOSFET-transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V

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€ 49,58

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Volume discounts - MRF300BN RF 300 W

Quantity	Discount	You Save
2	2%	Up to € 1,98
3	3%	Up to € 4,46
4	4%	Up to € 7,93
5	10%	Up to € 24,79
10	15%	Up to € 74,37

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Product discription:

MRF101BN RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
These devices are designed for use in VHF/UHF communications, VHF TV
broadcast and aerospace applications as well as industrial, scientific and
medical applications. The devices are exceptionally rugged and exhibit high
performance up to 250 MHz.

Features

Mirror pinout versions (A and B) to simplify use in a push--pull,
two--up configuration
Characterized from 30 to 50 V
Suitable for linear application
Integrated ESD protection with greater negative gate--source
voltage range for improved Class C operation
Included in NXP product longevity program with assured
supply for a minimum of 15 years after launch
Typical Applications
Industrial, scientific, medical (ISM)
Laser generation
Plasma etching
Particle accelerators
MRI and other medical applications
Industrial heating, welding and drying systems
Radio and VHF TV broadcast
HF and VHF communications
Switch mode power supplies