MRF300BN RF 300 W

    771-MRF101BN

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              MRF101BN RF MOSFET-transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V

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                € 53,71

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        More info MRF300BN RF 300 W

          Product discription:

          MRF101BN RF Power LDMOS Transistors
          High Ruggedness N--Channel
          Enhancement--Mode Lateral MOSFETs
          These devices are designed for use in VHF/UHF communications, VHF TV
          broadcast and aerospace applications as well as industrial, scientific and
          medical applications. The devices are exceptionally rugged and exhibit high
          performance up to 250 MHz.

          Features

          • Mirror pinout versions (A and B) to simplify use in a push--pull,
            two--up configuration
          • Characterized from 30 to 50 V
          • Suitable for linear application
          • Integrated ESD protection with greater negative gate--source
          • voltage range for improved Class C operation
          • Included in NXP product longevity program with assured
            supply for a minimum of 15 years after launch
          • Typical Applications
            Industrial, scientific, medical (ISM)
            Laser generation
            Plasma etching
            Particle accelerators
            MRI and other medical applications
            Industrial heating, welding and drying systems
            Radio and VHF TV broadcast
            HF and VHF communications
            Switch mode power supplies

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          • MRF300BN RF 300 W

              MRF300BN RF 300 W

              MRF101BN RF MOSFET-transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V