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Power LDMOS transistorA 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using Ampleon"s XR process to provide maximum ruggedness capability in the most severe applications without compromising the RF performance.
MRF300BN RF MOSFET-transistors RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
Power Amplifier Section 1000W FM BLF188XR Designed primarily for FM application, this amplifier is suitable for any CW or pulsed application. 87.5 - 108 MHz Pout: 1000 W Gain: 23 dB Extreme Ruggedness (VSWR 65:1) Class B Device: AMPLEON BLF188XR Supply : 30-50 VDC - 50VDC nominal Dimensions(LxWxH): 135x60x30 mm