MRF300BN RF 300 W



              MRF300BN RF MOSFET-transistors RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V

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                € 78,50

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          Quantity Discount You Save
          2 2% Up to € 3,14
          4 4% Up to € 12,56
          6 6% Up to € 28,26
          8 8% Up to € 50,24
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        More info MRF300BN RF 300 W

          Product discription:

          MRF300BN RF Power LDMOS Transistors High Ruggedness N--Channel
          Enhancement--Mode Lateral MOSFETs
          These high ruggedness devices are designed for use in high VSWR industrial,
          scientific and medical applications and HF and VHF communications as well as
          radio and VHF TV broadcast, sub--GHz aerospace and mobile radio applications.
          Their unmatched input and output design allows for wide frequency range use
          from 1.8 to 250 MHz


          • Unmatched input and output allowing wide frequency range
          • Two opposite pin--connection versions (A and B) to be used in
            a push--pull, two--up configuration for wideband performance
          • Characterized from 30 to 50 V
          • Suitable for linear application
          • Integrated ESD protection with greater negative gate--source
            voltage range for improved Class C operation
          • Typical Applications
            Industrial, scientific, medical (ISM)
            Laser generation
            Plasma etching
            Particle accelerators
            MRI and other medical applications
            Industrial heating, welding and drying systems
            Radio broadcast
            VHF TV broadcast
            Mobile radio
            VHF base stations
            HF and VHF communications
            Switch mode power supplies

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          • MRF300BN RF 300 W

              MRF300BN RF 300 W

              MRF300BN RF MOSFET-transistors RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V