MRFX1K80GNR5 1800W RF mosfet

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DMR Electronics

Model MRFX1K80GNR5

Condition New

MRFX1K80GNR5 1800W RF mosfet, Wideband RF Power LDMOS Transistor

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€ 421,48

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Volume discounts - MRFX1K80GNR5 1800W RF mosfet

Quantity	Discount	You Save
2	2%	Up to € 16,86
3	3%	Up to € 37,93
4	4%	Up to € 67,44
5	10%	Up to € 210,74
10	15%	Up to € 632,22

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Product discription:

RF MOSFET-transistors Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V

These high ruggedness devices are designed for use in high VSWR
industrial, medical, broadcast, aerospace and mobile radio applications. Their
unmatched input and output design supports frequency use from 1.8 to
400 MHz.

Technical facts:

Fabrikant:	NXP
Productcategorie:	RF MOSFET-transistors
RoHS:	Details
Polariteit transistor:	Dual N-Channel
Technologie:	Si
Id - Continue afvoerstroom:	43 A
Vds - Doorslagspanning van druppelbron:	- 500 mV, 179 V
Werkingsfrequentie:	1.8 MHz to 400 MHz
Versterking:	24.4 dB
Uitgangsvermogen:	1.8 kW
Minimale bedrijfstemperatuur:	- 40 C
Maximale bedrijfstemperatuur:	+ 150 C
Montagetype:	SMD/SMT
Verpakking / doos:	OM-1230G-4L
Verpakken:	Cut Tape
Verpakken:	Reel
Reeks:	MRFX1K80
Type:	RF Power MOSFET
Merk:	NXP Semiconductors
Voorwaartse transconductantie - min:	44.7 S
Aantal kanalen:	2 Channel
Vochtgevoelig:	Yes
Pd - Vermogensverlies:	3333 W
Producttype:	RF MOSFET Transistors
Subcategorie:	MOSFETs
Vgs - Poort-bronspanning:	- 6 V, 10 V
Vgs th - Drempelspanning van ingangsbron:	2.1 V
Onderdeelnr. Aliassen:	935362677578
Gewicht per stuk:	5,281 g