MRF101BN RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These devices are designed for use in VHF/UHF communications, VHF TV broadcast and aerospace applications as well as industrial, scientific and medical applications. The devices are exceptionally rugged and exhibit high performance up to 250 MHz.
Mirror pinout versions (A and B) to simplify use in a push--pull, two--up configuration
Characterized from 30 to 50 V
Suitable for linear application
Integrated ESD protection with greater negative gate--source
voltage range for improved Class C operation
Included in NXP product longevity program with assured supply for a minimum of 15 years after launch
Typical Applications Industrial, scientific, medical (ISM) Laser generation Plasma etching Particle accelerators MRI and other medical applications Industrial heating, welding and drying systems Radio and VHF TV broadcast HF and VHF communications Switch mode power supplies