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New MRF300BN RF 300 W View larger

MRF300BN RF 300 W

771-MRF101BN

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MRF101BN RF MOSFET-transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V

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€ 41,31 tax incl.

Volume discounts

Quantity Price You Save
5 € 37,18 Up to € 20,66
10 € 35,11 Up to € 61,97

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Product discription:


MRF101BN RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
These devices are designed for use in VHF/UHF communications, VHF TV
broadcast and aerospace applications as well as industrial, scientific and
medical applications. The devices are exceptionally rugged and exhibit high
performance up to 250 MHz.

Features

  • Mirror pinout versions (A and B) to simplify use in a push--pull,
    two--up configuration
  • Characterized from 30 to 50 V
  • Suitable for linear application
  • Integrated ESD protection with greater negative gate--source
  • voltage range for improved Class C operation
  • Included in NXP product longevity program with assured
    supply for a minimum of 15 years after launch
  • Typical Applications
    Industrial, scientific, medical (ISM)
    Laser generation
    Plasma etching
    Particle accelerators
    MRI and other medical applications
    Industrial heating, welding and drying systems
    Radio and VHF TV broadcast
    HF and VHF communications
    Switch mode power supplies

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MRF300BN RF 300 W

MRF300BN RF 300 W

MRF101BN RF MOSFET-transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V

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Viewed products

  • MRF300BN RF 300 W
    MRF300BN RF 300 W

    MRF101BN RF MOSFET-transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V